The thermal diffusion of Ti3+ ions into sapphire is demonstrated, and the spectroscopic characteristics of the locally doped region are presented. The spectral line shape, polarization dependence, and excited-state lifetime of indiffused Ti:sapphire are in excellent agreement with previously published data for high-quality, bulk-doped Ti:sapphire laser crystals. The observed diffusion rate at 1950 °C is of the order of D = 10-14 m2 s-1. These results represent a significant step in the development of a versatile broadly tunable waveguide laser based on the Ti3+:sapphire material system established for conventional bulk lasers.
© 1996 Optical Society of America
L. M. B. Hickey, E. Martins, J. E. Román, W. S. Brocklesby, and J. S. Wilkinson, "Fluorescence of Ti3+ ions thermally diffused into sapphire," Opt. Lett. 21, 597-599 (1996)