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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 22, Iss. 18 — Sep. 15, 1997
  • pp: 1418–1420

Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy

Dahv A. V. Kliner, Jeffrey P. Koplow, and Lew Goldberg  »View Author Affiliations


Optics Letters, Vol. 22, Issue 18, pp. 1418-1420 (1997)
http://dx.doi.org/10.1364/OL.22.001418


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Abstract

Tunable, narrow-bandwidth (<200-MHz), ~215-nm radiation was produced by frequency quadrupling the ~860-nm output of a high-power, pulsed GaAlAs tapered amplifier seeded by an external-cavity diode laser. Pulsing the amplifier increased the 860 nm→215 nm conversion efficiency by 2 orders of magnitude with respect to cw operation. Detection of nitric oxide and sulfur dioxide by high-resolution absorption spectroscopy was demonstrated.

© 1997 Optical Society of America

Citation
Dahv A. V. Kliner, Jeffrey P. Koplow, and Lew Goldberg, "Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy," Opt. Lett. 22, 1418-1420 (1997)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-22-18-1418

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