We report the measurement of a fast carrier lifetime and large band-gap-resonant optical nonlinearities in an InGaAsP sample grown by He-plasma-assisted molecular beam epitaxy. Using a 2-µm-thick sample grown on an InP substrate, we observed a carrier lifetime of 15 ps and an index change as large as 0.077 induced by an intense 1-ps pulse at a wavelength of 1.57 µm. Good crystalline structure is maintained in the material during growth, and the absorption spectrum shows a sharp band edge. These properties indicate that materials produced by He-plasma-assisted growth have potential applications in compact ultrafast photonic devices.
© 1997 Optical Society of America
L. Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, and D. A. Thompson, "Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy," Opt. Lett. 22, 108-110 (1997)