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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 22, Iss. 20 — Oct. 15, 1997
  • pp: 1556–1558

Ti:sapphire planar waveguide laser grown by pulsed laser deposition

A. A. Anderson, R. W. Eason, L. M. B. Hickey, M. Jelinek, C. Grivas, D. S. Gill, and N. A. Vainos  »View Author Affiliations


Optics Letters, Vol. 22, Issue 20, pp. 1556-1558 (1997)
http://dx.doi.org/10.1364/OL.22.001556


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Abstract

We document the lasing performance of a waveguiding layer of Ti:sapphire, of ~12-μm thickness, grown by pulsed laser deposition from a 0.12–wt.% Ti2O3 Ti:sapphire single-crystal target onto an undoped z-cut sapphire substrate. Lasing around 800 nm is observed when the waveguide layer is pumped by an argon-ion laser running on all-blue-green lines, with an absorbed power threshold of 0.56 W, with high-reflectivity (R>98%) mirrors. With a 5% pump duty cycle and a T=35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-cw output powers in excess of 350 mW.

© 1997 Optical Society of America

Citation
A. A. Anderson, R. W. Eason, L. M. B. Hickey, M. Jelinek, C. Grivas, D. S. Gill, and N. A. Vainos, "Ti:sapphire planar waveguide laser grown by pulsed laser deposition," Opt. Lett. 22, 1556-1558 (1997)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-22-20-1556

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