Based on a multi-three-wave mixing model, we theoretically study the resistance against light-induced scattering in LiNbO3:M (M=Mg2+,Zn2+,In3+,Sc3+) crystals. We have simulated the intensity angular distribution of light-induced scatterings. We have also shown that the total light-induced scattering will be much less than 1% of the incident light intensity when the photovoltaic field Eph is less than 4.0×106V/m .Phase gratings and signal beams can still be formed and amplified effectively in LiNbO3:M crystals, with Eph less than 4.0×106V/m .
© 1997 Optical Society of America
Guoquan Zhang, Guangyin Zhang, Simin Liu, Jingjun Xu, Guoyun Tian, and Qian Sun, "Theoretical study of resistance against light-induced scattering in LiNbO3:M (M = Mg2+, Zn2+, In3+, Sc3+) crystals," Opt. Lett. 22, 1666-1668 (1997)