We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.
© 1998 Optical Society of America
S. P. Hegarty, G. Huyet, P. Porta, and J. G. McInerney, "Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime," Opt. Lett. 23, 1206-1208 (1998)