Experimental observation of optical bistability in a semiconductor laser under intermodal injection locking is reported for what is believed to be the first time. It is seen that a change in injection power of several microwatts or master laser frequency detuning of a few hundred megahertz can induce a change of as much as several hundred gigahertz in the lasing frequency of the slave laser. The results are in qualitative agreement with theoretical predictions.
© 1998 America
Y. Hong and K. A. Shore, "Observation of optical bistability in a GaAlAs semiconductor laser under intermodal injection locking," Opt. Lett. 23, 1689-1691 (1998)