Investigation of the holographic storage capacity of paraelectric K1-xLix Ta1-y Nby O3:Cu,V
Optics Letters, Vol. 23, Issue 8, pp. 642-644 (1998)
http://dx.doi.org/10.1364/OL.23.000642
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Abstract
High holographic storage capacity of paraelectric K1-xLix Ta1-y Nby O3:Cu , V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/# of 20.
© 1998 of America
OCIS Codes
(090.0090) Holography : Holography
(160.5320) Materials : Photorefractive materials
(190.5330) Nonlinear optics : Photorefractive optics
Citation
Benny Pesach, Eli Refaeli, and Aharon J. Agranat, "Investigation of the holographic storage capacity of paraelectric K1-xLix Ta1-y Nby O3:Cu,V," Opt. Lett. 23, 642-644 (1998)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-23-8-642
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