High holographic storage capacity of paraelectric K<sub>1-<i>x</i></sub>Li<i>x</i> Ta<sub>1-<i>y</i></sub> Nb<i>y</i> O<sub>3</sub>:Cu , V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/# of 20.
© 1998 of America
Benny Pesach, Eli Refaeli, and Aharon J. Agranat, "Investigation of the holographic storage capacity of paraelectric K1-xLix Ta1-y Nby O3:Cu,V," Opt. Lett. 23, 642-644 (1998)