Crystallization of GeO2-SiO2 glass by poling with ArF-laser excitation
Optics Letters, Vol. 24, Issue 20, pp. 1404-1406 (1999)
http://dx.doi.org/10.1364/OL.24.001404
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Abstract
We report on crystallization of 15.7GeO2 ˙ 84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100(mJ/cm 2)/pulse , and the number of shots was 104 . The crystallites that were observed in the glass were approximately 15–20µm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ~0.5×105V/cm , beyond which crystallization occurred.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(160.2750) Materials : Glass and other amorphous materials
(160.4330) Materials : Nonlinear optical materials
Citation
Syuji Matsumoto, Takumi Fujiwara, Motoshi Ohama, and Akira J. Ikushima, "Crystallization of GeO2-SiO2 glass by poling with ArF-laser excitation," Opt. Lett. 24, 1404-1406 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-20-1404
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