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  • Vol. 24, Iss. 20 — Oct. 15, 1999
  • pp: 1404–1406

Crystallization of GeO2-SiO2 glass by poling with ArF-laser excitation

Syuji Matsumoto, Takumi Fujiwara, Motoshi Ohama, and Akira J. Ikushima  »View Author Affiliations


Optics Letters, Vol. 24, Issue 20, pp. 1404-1406 (1999)
http://dx.doi.org/10.1364/OL.24.001404


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Abstract

We report on crystallization of 15.7GeO2 ˙ 84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100(mJ/cm 2)/pulse , and the number of shots was 104 . The crystallites that were observed in the glass were approximately 15–20µm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ~0.5×105V/cm , beyond which crystallization occurred.

© 1999 Optical Society of America

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(160.2750) Materials : Glass and other amorphous materials
(160.4330) Materials : Nonlinear optical materials

Citation
Syuji Matsumoto, Takumi Fujiwara, Motoshi Ohama, and Akira J. Ikushima, "Crystallization of GeO2-SiO2 glass by poling with ArF-laser excitation," Opt. Lett. 24, 1404-1406 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-20-1404


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References

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  6. S. Matsumoto, T. Fujiwara, M. Ohama, and A. J. Ikushima, “Crystallization and optical nonlinearites in GeO2– SiO2 glass poled with ArF laser,” in Bragg Gratings, Photosensitivity, and Poling in Glass Waveguides, E. J. Friebele, R. Kashyap, and T. Erdogan, eds., Vol. 33 of OSA Trends in Optics and Photonics Series (Optical Society of America, Washington, D.C., to be published).

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