We report on crystallization of 15.7GeO<sub>2</sub> ˙ 84.3SiO<sub>2</sub> (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100(mJ/cm <sup>2</sup>)/pulse , and the number of shots was 10<sup>4</sup> . The crystallites that were observed in the glass were approximately 15–20µm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of ~0.5×10<sup>5</sup>V/cm , beyond which crystallization occurred.
© 1999 Optical Society of America
Syuji Matsumoto, Takumi Fujiwara, Motoshi Ohama, and Akira J. Ikushima, "Crystallization of GeO2-SiO2 glass by poling with ArF-laser excitation," Opt. Lett. 24, 1404-1406 (1999)