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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 24, Iss. 20 — Oct. 15, 1999
  • pp: 1407–1409

Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes

Fu-Jen Kao, Mao-Kuo Huang, Yung-Shun Wang, Sheng-Lung Huang, Ming-Kwei Lee, and Chi-Kuang Sun  »View Author Affiliations


Optics Letters, Vol. 24, Issue 20, pp. 1407-1409 (1999)
http://dx.doi.org/10.1364/OL.24.001407


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Abstract

Epilayers of packaged indium gallium nitride light-emitting diodes (LED’s) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED’s are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.

© 1999 Optical Society of America

OCIS Codes
(180.1790) Microscopy : Confocal microscopy
(230.3670) Optical devices : Light-emitting diodes
(250.5230) Optoelectronics : Photoluminescence
(260.5150) Physical optics : Photoconductivity

Citation
Fu-Jen Kao, Mao-Kuo Huang, Yung-Shun Wang, Sheng-Lung Huang, Ming-Kwei Lee, and Chi-Kuang Sun, "Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes," Opt. Lett. 24, 1407-1409 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-20-1407

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