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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 24, Iss. 22 — Nov. 15, 1999
  • pp: 1581–1583

Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors

P. R. Willmott, P. Manoravi, J. R. Huber, T. Greber, Tracey A. Murray, and Keith Holliday  »View Author Affiliations


Optics Letters, Vol. 24, Issue 22, pp. 1581-1583 (1999)
http://dx.doi.org/10.1364/OL.24.001581


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Abstract

Crystalline Ti:sapphire (Ti:Al2O3) thin films were grown at low temperatures upon Al2O3 (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti–Al alloy target and O2 . The films were investigated ex situ by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti3+ ions in bulk samples of Al2O3 .

© 1999 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(230.7390) Optical devices : Waveguides, planar
(260.3800) Physical optics : Luminescence
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

Citation
P. R. Willmott, P. Manoravi, J. R. Huber, T. Greber, Tracey A. Murray, and Keith Holliday, "Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors," Opt. Lett. 24, 1581-1583 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-22-1581

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