Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors
Optics Letters, Vol. 24, Issue 22, pp. 1581-1583 (1999)
http://dx.doi.org/10.1364/OL.24.001581
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Abstract
Crystalline Ti:sapphire (Ti:Al2O3) thin films were grown at low temperatures upon Al2O3 (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti–Al alloy target and O2 . The films were investigated ex situ by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti3+ ions in bulk samples of Al2O3 .
© 1999 Optical Society of America
OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(230.7390) Optical devices : Waveguides, planar
(260.3800) Physical optics : Luminescence
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties
Citation
P. R. Willmott, P. Manoravi, J. R. Huber, T. Greber, Tracey A. Murray, and Keith Holliday, "Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors," Opt. Lett. 24, 1581-1583 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-22-1581
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