Crystalline Ti:sapphire (Ti:Al<sub>2</sub>O<sub>3</sub>) thin films were grown at low temperatures upon Al<sub>2</sub>O<sub>3</sub> (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti–Al alloy target and O<sub>2</sub> . The films were investigated <i>ex situ</i> by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti<sup>3+</sup> ions in bulk samples of Al<sub>2</sub>O<sub>3</sub> .
© 1999 Optical Society of America
(140.3390) Lasers and laser optics : Laser materials processing
(230.7390) Optical devices : Waveguides, planar
(260.3800) Physical optics : Luminescence
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties
P. R. Willmott, P. Manoravi, J. R. Huber, T. Greber, Tracey A. Murray, and Keith Holliday, "Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors," Opt. Lett. 24, 1581-1583 (1999)