OSA's Digital Library

Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 24, Iss. 3 — Feb. 1, 1999
  • pp: 151–153

High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier

Gabriele Ferrari, Marc-Oliver Mewes, Florian Schreck, and Christophe Salomon  »View Author Affiliations


Optics Letters, Vol. 24, Issue 3, pp. 151-153 (1999)
http://dx.doi.org/10.1364/OL.24.000151


View Full Text Article

Acrobat PDF (993 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplif ier in a master oscillator–power amplif ier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference δ was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For δ < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a f lexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components.

© 1999 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3280) Lasers and laser optics : Laser amplifiers
(140.3600) Lasers and laser optics : Lasers, tunable
(140.4480) Lasers and laser optics : Optical amplifiers
(140.5960) Lasers and laser optics : Semiconductor lasers

Citation
Gabriele Ferrari, Marc-Oliver Mewes, Florian Schreck, and Christophe Salomon, "High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier," Opt. Lett. 24, 151-153 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-3-151


Sort:  Journal  |  Reset

References

  1. L. Hollberg and C. Wieman, Rev. Sci. Instrum. 62, 1 (1991).
  2. J. N. Walpole, Opt. Quantum Electron. 28, 623 (1996).
  3. Spectra Diode Laboratories, 1998 Semiconductor Laser Product Catalog (Spectra Diode Laboratories, San Jose, Calif., 1998).
  4. D. Mehuys, D. F. Welch, and L. Goldberg, Electron. Lett. 28, 1944 (1992).
  5. F. Z. Cruz, M. Rauner, J. H. Marquart, L. Hollberg, and J. C. Bergquist, in Proceedings of the Fifth Symposium on Frequency Standards and Metrology, J. C. Bergquist, ed. (World Scientific, Singapore, 1995), p. 511.
  6. A. C. Wilson, J. C. Sharpe, C. R. McKenzie, P. J. Manson, and D. M. Warrington, Appl. Opt. 37, 4871 (1998).
  7. W. W. Chow, S. W. Koch, and M. Sargent III, Semiconductor-Laser Physics (Springer-Verlag, Berlin, 1994), p. 286.
  8. W. Lenth, Opt. Lett. 8, 575 (1983).
  9. In some cases it is possible to detect third-order sidebands: For R = 1 the relative power at ν1 – 2 3δ was, ∼ 1% for frequency differences δ from 20 to 100 MHz, whereas for R = 0.5 it was 0.3% at δ = 100 MHz. Only for δ = 20 MHz and R = 1 was it possible to detect a component at ν2 + 3δ with a relative power of 1%.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited