The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplif ier in a master oscillator–power amplif ier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference δ was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For δ < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a f lexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components.
© 1999 Optical Society of America
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3280) Lasers and laser optics : Laser amplifiers
(140.3600) Lasers and laser optics : Lasers, tunable
(140.4480) Lasers and laser optics : Optical amplifiers
(140.5960) Lasers and laser optics : Semiconductor lasers
Gabriele Ferrari, Marc-Oliver Mewes, Florian Schreck, and Christophe Salomon, "High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier," Opt. Lett. 24, 151-153 (1999)