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Optics Letters

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  • Vol. 24, Iss. 5 — Mar. 1, 1999
  • pp: 321–323

Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells

S. Iwamoto, H. Kageshima, T. Yuasa, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda  »View Author Affiliations


Optics Letters, Vol. 24, Issue 5, pp. 321-323 (1999)
http://dx.doi.org/10.1364/OL.24.000321


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Abstract

Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of 0.91–0.94µm in the Franz–Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches ~1.5×10-4 .

© 1999 Optical Society of America

OCIS Codes
(160.5320) Materials : Photorefractive materials
(160.6000) Materials : Semiconductor materials
(190.5330) Nonlinear optics : Photorefractive optics

Citation
S. Iwamoto, H. Kageshima, T. Yuasa, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda, "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells," Opt. Lett. 24, 321-323 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-5-321


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