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Optics Letters

Optics Letters


  • Vol. 25, Iss. 14 — Jul. 15, 2000
  • pp: 1025–1027

Optimization of semiconductor quantum devices by evolutionary search

Guido Goldoni and Fausto Rossi  »View Author Affiliations

Optics Letters, Vol. 25, Issue 14, pp. 1025-1027 (2000)

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A novel simulation strategy is proposed for searching for semiconductor quantum devices that are optimized with respect to required performances. Based on evolutionary programming, a technique that implements the paradigm of genetic algorithms in more-complex data structures than strings of bits, the proposed algorithm is able to deal with quantum devices with preset nontrivial constraints (e.g., transition energies, geometric requirements). Therefore our approach allows for automatic design, thus avoiding costly by-hand optimizations. We demonstrate the advantages of the proposed algorithm through a relevant and nontrivial application, the optimization of a second-harmonic-generation device working in resonance conditions.

© 2000 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.4200) Detectors : Multiple quantum well
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Guido Goldoni and Fausto Rossi, "Optimization of semiconductor quantum devices by evolutionary search," Opt. Lett. 25, 1025-1027 (2000)

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  8. Generalizations to more-complex structures such as ternary alloys and doped layers is straightforward.
  9. For example, for a type I AlxGa 1-xAs heterostructure we typically require that 0<xi<0.4.
  10. In the proposed implementation, we were inspired by the GENOCOP system described in Ref. 5, but additional operators have also been introduced that are suited to the specific problem.
  11. One can, at least in principle, write any property of the quantum structure in terms of the orthonormal basis set obtained from the single-particle wave functions.
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  15. The optimized potential in Ref. spans more than 0.5 eV and cannot be implemented as a strictly type I structure. A distinct advantage of the present method is the easy implementation of physical limitations, such as alloy concentrations, on the parameter space.

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