Abstract

A compact integration-compatible semiconductor laser supporting a planar Gaussian mode is demonstrated. Curved deep-etched distributed Bragg reflectors (DBR’s), contouring the phase front of the Gaussian wave, act as feedback elements. The DBR’s are $0.5 \mathit{\mu }\mathrm{m}$ deep and have two first-order air gaps separated by a third-order semiconductor spacer. Low-threshold current (10 mA) is achieved for a $90‐\mathit{\mu }\mathrm{m}$-long laser with a waist of $2 \mathit{\mu }\mathrm{m}$. Lasing in a planar Gaussian mode is observed up to 1.7 times the threshold current, whereas at higher currents the mode behavior degrades because of spatial hole burning.

© 2000 Optical Society of America

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