Semiconductor laser with curved deep-etched distributed Bragg reflectors supporting a planar Gaussian mode
Optics Letters, Vol. 25, Issue 2, pp. 108-110 (2000)
http://dx.doi.org/10.1364/OL.25.000108
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Abstract
A compact integration-compatible semiconductor laser supporting a planar Gaussian mode is demonstrated. Curved deep-etched distributed Bragg reflectors (DBR's), contouring the phase front of the Gaussian wave, act as feedback elements. The DBR's are 0.5 µm deep and have two first-order air gaps separated by a third-order semiconductor spacer. Low-threshold current (10 mA) is achieved for a 90-µm-long laser with a waist of 2 µm. Lasing in a planar Gaussian mode is observed up to 1.7 times the threshold current, whereas at higher currents the mode behavior degrades because of spatial hole burning.
© 2000 Optical Society of America
OCIS Codes
(130.0130) Integrated optics : Integrated optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.1480) Optical devices : Bragg reflectors
(250.5300) Optoelectronics : Photonic integrated circuits
Citation
Peter Modh, Niklas Eriksson, Anders Larsson, and Toshiaki Suhara, "Semiconductor laser with curved deep-etched distributed Bragg reflectors supporting a planar Gaussian mode," Opt. Lett. 25, 108-110 (2000)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-25-2-108
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