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  • Vol. 26, Iss. 1 — Jan. 1, 2001
  • pp: 1–3

Broadband terahertz emission through exciton trapping in a semiconductor quantum well

S. Hughes and D. S. Citrin  »View Author Affiliations


Optics Letters, Vol. 26, Issue 1, pp. 1-3 (2001)
http://dx.doi.org/10.1364/OL.26.000001


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Abstract

Exciton trapping in a dc-biased quantum well is shown to result in the emission of broadband terahertz transients. The transients are free from bandwidth limitations, very intense, and quite distinctive.

© 2001 Optical Society of America

OCIS Codes
(190.0190) Nonlinear optics : Nonlinear optics
(270.0270) Quantum optics : Quantum optics
(320.7120) Ultrafast optics : Ultrafast phenomena

Citation
S. Hughes and D. S. Citrin, "Broadband terahertz emission through exciton trapping in a semiconductor quantum well," Opt. Lett. 26, 1-3 (2001)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-26-1-1


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References

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  5. See, for example, L. Allen and J. H. Eberly, Optical Resonance and Two-Level Atoms (Wiley, New York, 1995).
  6. For the theory, see G. A. Agarwal and W. Harshawardhan, Phys. Rev. A 50, 4465 (1994); for an experiment, M. W. Noel, W. M. Griffith, and T. F. Gallagher, Phys. Rev. A 58, 2265 (1998).
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  8. Reduced mass, m=0.035me; 1s excitonic binding energy, E1s≈12meV; Bohr radius (two-dimensional), a0=7.5nm.
  9. Q. Wu and X.-C. Zhang, Appl. Phys. Lett. 71, 1285 (1997), and references therein.
  10. S. Hughes and D. S. Citrin, Opt. Lett. 24, 1242 (1999); Opt. Photon. News 10(12), 44 (1999).
  11. P. K. Lam and C. M. Savage, Phys. Rev. A 50, 3500 (1994).

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