Photorefractive multiple quantum wells at 1064 nm
Optics Letters, Vol. 26, Issue 1, pp. 22-24 (2001)
http://dx.doi.org/10.1364/OL.26.000022
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Abstract
We have fabricated photorefractive InGaAs/GaAs multiple quantum wells that are sensitive at wavelengths near 1.06 μm for what is believed to be the first time. We have measured four-wave-mixing diffraction efficiency, using a Nd:YAG laser. A maximum diffraction efficiency of 7 × 10-4 and a cutoff grating period of ∼2 μm are obtained.
© 2001 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.5320) Materials : Photorefractive materials
(160.6000) Materials : Semiconductor materials
(190.5530) Nonlinear optics : Pulse propagation and temporal solitons
Citation
S. Iwamoto, S. Taketomi, H. Kageshima, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda, "Photorefractive multiple quantum wells at 1064 nm," Opt. Lett. 26, 22-24 (2001)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-26-1-22
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