We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2×10<sup>-17</sup>W Hz<sup>-1/2</sup> . Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 10<sup>14</sup>cm <sup>-3</sup> . This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window.
© 2001 Optical Society of America
Jason M. Smith, Philip A. Hiskett, and Gerald S. Buller, "Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm," Opt. Lett. 26, 731-733 (2001)