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Optics Letters

Optics Letters

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  • Vol. 26, Iss. 11 — Jun. 1, 2001
  • pp: 849–851

Origin of magnetic field enhancement in the generation of terahertz radiation from semiconductor surfaces

J. Shan, C. Weiss, R. Wallenstein, R. Beigang, and T. F. Heinz  »View Author Affiliations


Optics Letters, Vol. 26, Issue 11, pp. 849-851 (2001)
http://dx.doi.org/10.1364/OL.26.000849


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Abstract

We present a theory of the magnetic field enhancement of terahertz (THz) emission from photogenerated carriers in the surface depletion region of a semiconductor. A combination of the Drude–Lorentz model for the carrier dynamics with an appropriate solution of the radiation problem is sufficient to explain the strong B -field enhancement in THz radiation that has been observed experimentally. The effect arises primarily from the increased radiation efficiency of transient currents flowing in the plane of the surface. The model provides quantitative agreement with experiment for the pronounced angular dependence of the enhancement and predicts the correct trend for the enhancement in a variety of materials.

© 2001 Optical Society of America

OCIS Codes
(160.5140) Materials : Photoconductive materials
(190.7110) Nonlinear optics : Ultrafast nonlinear optics
(230.0250) Optical devices : Optoelectronics
(240.4350) Optics at surfaces : Nonlinear optics at surfaces
(300.6270) Spectroscopy : Spectroscopy, far infrared
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Citation
J. Shan, C. Weiss, R. Wallenstein, R. Beigang, and T. F. Heinz, "Origin of magnetic field enhancement in the generation of terahertz radiation from semiconductor surfaces," Opt. Lett. 26, 849-851 (2001)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-26-11-849

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