Abstract
We present what we believe to be the first actively -switched monolithic microchip laser with a wavelength of that uses an electro-absorbing semiconductor modulator. At an absorbed pump power of 130 mW and a switching voltage of 2.2 V, the laser produces 470-nJ pulses at a repetition rate of 10 kHz. The output is a stable single longitudinal mode with a center wavelength of , and the transverse beam profile is close to an ideal Gaussian, with an value of 1.15.
© 2001 Optical Society of America
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