Eye-safe actively Q-switched microchip laser with an electro-absorbing semiconductor modulator
Optics Letters, Vol. 26, Issue 14, pp. 1057-1059 (2001)
http://dx.doi.org/10.1364/OL.26.001057
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Abstract
We present what we believe to be the first actively Q -switched monolithic microchip laser with a wavelength of 1.55 µm that uses an electro-absorbing semiconductor modulator. At an absorbed pump power of 130 mW and a switching voltage of 2.2 V, the laser produces 470-nJ pulses at a repetition rate of 10 kHz. The output is a stable single longitudinal mode with a center wavelength of 1.553 µm, and the transverse beam profile is close to an ideal Gaussian, with an M2 value of 1.15.
© 2001 Optical Society of America
[Optical Society of America ]
OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3500) Lasers and laser optics : Lasers, erbium
(140.3540) Lasers and laser optics : Lasers, Q-switched
(160.2100) Materials : Electro-optical materials
(230.4110) Optical devices : Modulators
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
Citation
Björn T. Hansson and Ari T. Friberg, "Eye-safe actively Q-switched microchip laser with an electro-absorbing semiconductor modulator," Opt. Lett. 26, 1057-1059 (2001)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-26-14-1057
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