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Optics Letters

Optics Letters


  • Vol. 26, Iss. 14 — Jul. 15, 2001
  • pp: 1099–1101

Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers--superluminescent diodes

Ching-Fuh Lin, Bing-Ruey Wu, Lih-Wen Laih, and Tien-Tsorng Shih  »View Author Affiliations

Optics Letters, Vol. 26, Issue 14, pp. 1099-1101 (2001)

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Extremely broadband emission is obtained from semiconductor optical amplifiers–superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In0.67 Ga0.33 As0.72 P0.28 quantum wells near the n -cladding layer and the two In0.53 Ga0.47 As quantum wells near the p -cladding layer, all bounded by In0.86 Ga0.14 As0.3P0.7 barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 µm, and the FWHM could be near 300 nm.

© 2001 Optical Society of America

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(160.3380) Materials : Laser materials
(160.6000) Materials : Semiconductor materials
(230.0250) Optical devices : Optoelectronics
(250.5980) Optoelectronics : Semiconductor optical amplifiers

Ching-Fuh Lin, Bing-Ruey Wu, Lih-Wen Laih, and Tien-Tsorng Shih, "Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers--superluminescent diodes," Opt. Lett. 26, 1099-1101 (2001)

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