Energy transfer at optical frequencies to silicon-on-insulator structures
Optics Letters, Vol. 26, Issue 18, pp. 1421-1423 (2001)
http://dx.doi.org/10.1364/OL.26.001421
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Abstract
The refractive-index distribution that is intrinsic to the silicon-on-insulator (SOI) material system makes it possible for optical-frequency guided waves to be confined by the SOI silicon layer. The same refractive-index distribution is unusual among nonmetals in that it is possible for those SOI guided waves to interact strongly with nearby optical-frequency radiators, absorbers, and scatterers (e.g., atoms, molecules, and nanoparticles). We calculate the guided-mode excitation efficiency for an exterior particle near the SOI surface and show that it can attain values greater than 80% under appropriate conditions, thus showing that the SOI waveguide system is an attractive platform for the study of optical-frequency surface interactions.
© 2001 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.3130) Materials : Integrated optics materials
(160.6000) Materials : Semiconductor materials
(230.7370) Optical devices : Waveguides
Citation
Brian J. Soller, Howard R. Stuart, and Dennis G. Hall, "Energy transfer at optical frequencies to silicon-on-insulator structures," Opt. Lett. 26, 1421-1423 (2001)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-26-18-1421
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