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Optics Letters

Optics Letters


  • Vol. 26, Iss. 20 — Oct. 15, 2001
  • pp: 1586–1588

Gallium-diffused waveguides in sapphire

V. Apostolopoulos, L. M. B. Hickey, D. A. Sager, and J. S. Wilkinson  »View Author Affiliations

Optics Letters, Vol. 26, Issue 20, pp. 1586-1588 (2001)

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The fabrication and characterization of gallium-diffused planar waveguides in sapphire are reported. Waveguides were fabricated by diffusion of 60–200-nm-thick films of gallium oxide into c -cut sapphire at 1600 °C for times ranging from 6 to 16 h. Near-field intensity profiles of the guided modes were measured at wavelengths from 488 to 850 nm, and the surface-index elevation was estimated to be up to (0.6±0.02)×10-2 . Potential applications for low-threshold Ti:sapphire waveguide lasers and for optical integrated circuits with passive and active elements in sapphire are discussed.

© 2001 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.3130) Integrated optics : Integrated optics materials
(230.7390) Optical devices : Waveguides, planar
(290.1990) Scattering : Diffusion

V. Apostolopoulos, L. M. B. Hickey, D. A. Sager, and J. S. Wilkinson, "Gallium-diffused waveguides in sapphire," Opt. Lett. 26, 1586-1588 (2001)

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