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Optics Letters

Optics Letters


  • Vol. 26, Iss. 3 — Feb. 1, 2001
  • pp: 160–162

1.55-μm and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

Ming-Kwei Lee, Chi-Hsing Chu, Yu-Hsiung Wang, and S. M. Sze  »View Author Affiliations

Optics Letters, Vol. 26, Issue 3, pp. 160-162 (2001)

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We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4–1.7 μm . The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 μm . The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-μm , 10-mW laser diode. The corresponding quantum efficiency is 14.4%.

© 2001 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(250.3140) Optoelectronics : Integrated optoelectronic circuits

Ming-Kwei Lee, Chi-Hsing Chu, Yu-Hsiung Wang, and S. M. Sze, "1.55-μm and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector," Opt. Lett. 26, 160-162 (2001)

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