Abstract
We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from , which is typical for , to , which is close to that of liquid Ga. The initial step in the reflectivity change of 2–4 ps is resolved with 150-fs laser pulses. The light-induced reflectivity change relaxes during , depending strongly on the background temperature of the Ga mirror and the laser fluence.
© 2001 Optical Society of America
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A. V. Rode, M. Samoc, B. Luther-Davies, E. G. Gamaly, K. F. MacDonald, and N. I. Zheludev, "Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation: errata," Opt. Lett. 26, 852-852 (2001)https://opg.optica.org/ol/abstract.cfm?uri=ol-26-11-852
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