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Optics Letters

Optics Letters


  • Vol. 27, Iss. 10 — May. 15, 2002
  • pp: 839–841

Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver

Pallab Bhattacharya, Jian Xu, Gyorgy Váró, Duane L. Marcy, and Robert R. Birge  »View Author Affiliations

Optics Letters, Vol. 27, Issue 10, pp. 839-841 (2002)

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We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor's heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.

© 2002 Optical Society of America

OCIS Codes
(160.1890) Materials : Detector materials
(230.0040) Optical devices : Detectors
(230.4000) Optical devices : Microstructure fabrication
(250.3140) Optoelectronics : Integrated optoelectronic circuits

Pallab Bhattacharya, Jian Xu, Gyorgy Váró, Duane L. Marcy, and Robert R. Birge, "Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver," Opt. Lett. 27, 839-841 (2002)

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