Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver
Optics Letters, Vol. 27, Issue 10, pp. 839-841 (2002)
http://dx.doi.org/10.1364/OL.27.000839
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Abstract
We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor's heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.
© 2002 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.1890) Materials : Detector materials
(230.0040) Optical devices : Detectors
(230.4000) Optical devices : Microstructure fabrication
(250.3140) Optoelectronics : Integrated optoelectronic circuits
Citation
Pallab Bhattacharya, Jian Xu, Gyorgy Váró, Duane L. Marcy, and Robert R. Birge, "Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver," Opt. Lett. 27, 839-841 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-10-839
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