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Optics Letters

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  • Vol. 27, Iss. 11 — Jun. 1, 2002
  • pp: 948–950

Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks

W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon  »View Author Affiliations


Optics Letters, Vol. 27, Issue 11, pp. 948-950 (2002)
http://dx.doi.org/10.1364/OL.27.000948


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Abstract

We have studied the enhancement of spontaneous emission rates for InAs quantum dots embedded in GaAs microdisks in a time-resolved photoluminescence experiment. Inhomogeneous broadening of the quantum dot energy levels and random spatial distribution of the quantum dots in a microdisk lead to a broad distribution of the spontaneous emission rates. Using a nonnegative least-norm algorithm, we extract the distribution of spontaneous emission rates from the temporal decay of emission intensity. The maximum spontaneous emission enhancement factor exceeds 10.

© 2002 Optical Society of America

OCIS Codes
(140.4780) Lasers and laser optics : Optical resonators
(270.0270) Quantum optics : Quantum optics
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(320.7120) Ultrafast optics : Ultrafast phenomena
(350.3950) Other areas of optics : Micro-optics

Citation
W. Fang, J. Y. Xu, A. Yamilov, H. Cao, Y. Ma, S. T. Ho, and G. S. Solomon, "Large enhancement of spontaneous emission rates of InAs quantum dots in GaAs microdisks," Opt. Lett. 27, 948-950 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-11-948


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