For Gaussian-beam-induced optical limiting based on photoconductive field shielding of electro-optic (EO) birefringence, power-limiting notch widths may be accurately determined by considering the power-limiting threshold for the photorefractive crystal where excess charge accumulates. With sufficient optical intensity the space-charge field completely screens the externally applied electric field, and only a small diffusion field remains. The upper limit of light intensity attenuation is the extinction ratio for the combination of polarizers and EO crystal.
© 2002 Optical Society of America
(070.6110) Fourier optics and signal processing : Spatial filtering
(190.5330) Nonlinear optics : Photorefractive optics
(200.4740) Optics in computing : Optical processing
(230.2090) Optical devices : Electro-optical devices
(230.4320) Optical devices : Nonlinear optical devices
Dale M. Stevens and Partha P. Banerjee, "Gaussian-beam-induced photorefractive birefringence and its application to radio-frequency signal excision," Opt. Lett. 27, 1333-1335 (2002)