Self-starting mode locking in a Cr:forsterite laser by use of non-epitaxially-grown semiconductor-doped silica films
Optics Letters, Vol. 27, Issue 17, pp. 1564-1566 (2002)
http://dx.doi.org/10.1364/OL.27.001564
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Abstract
We demonstrate RF sputtered, non-epitaxially-grown semiconductor nanocrystallite-doped silica films for mode locking a Cr:forsterite laser. We controlled the size and the optical properties of the nanocrystallites by varying the ratio of InAs to SiO2 during fabrication. Femtosecond pump–probe measurements were performed to characterize the nonlinear optical properties of these films, revealing their lower saturation fluences. Using the InAs-doped silica films as saturable absorbers permitted self-starting Kerr-lens mode locking (KLM), generating pulses of 25-fs duration with 91-nm spectral bandwidth at 1.3 µm . We also describe saturable-absorber mode-locked operation without KLM and investigate its dependence on intracavity dispersion.
© 2002 Optical Society of America
[Optical Society of America ]
OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.7090) Lasers and laser optics : Ultrafast lasers
(230.4320) Optical devices : Nonlinear optical devices
(320.7080) Ultrafast optics : Ultrafast devices
Citation
R. P. Prasankumar, C. Chudoba, J. G. Fujimoto, P. Mak, and M. F. Ruane, "Self-starting mode locking in a Cr:forsterite laser by use of non-epitaxially-grown semiconductor-doped silica films," Opt. Lett. 27, 1564-1566 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-17-1564
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