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Optics Letters

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  • Vol. 27, Iss. 20 — Oct. 15, 2002
  • pp: 1776–1778

Method of measuring the spatial resolution of a photoresist

J. A. Hoffnagle, W. D. Hinsberg, M. I. Sanchez, and F. A. Houle  »View Author Affiliations


Optics Letters, Vol. 27, Issue 20, pp. 1776-1778 (2002)
http://dx.doi.org/10.1364/OL.27.001776


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Abstract

By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography allows the resist response to be quantified at length scales below 100 nm. As an example, the resolution (FWHM) of the commercial resist UVII-HS is found to be approximately 50 nm. This simple method can be applied to materials under development for advanced photolithography with short-wavelength illumination.

© 2002 Optical Society of America

OCIS Codes
(110.4100) Imaging systems : Modulation transfer function
(110.5220) Imaging systems : Photolithography
(310.3840) Thin films : Materials and process characterization

Citation
J. A. Hoffnagle, W. D. Hinsberg, M. I. Sanchez, and F. A. Houle, "Method of measuring the spatial resolution of a photoresist," Opt. Lett. 27, 1776-1778 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-20-1776


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References

  1. W. Hinsberg, F. A. Houle, J. Hoffnagle, M. Sanchez, G. Wallraff, M. Morrison, and S. Frank, J. Vac. Sci. Technol. B 16, 3689 (1998).
  2. F. A. Houle, W. D. Hinsberg, M. I. Sanchez, and J. A. Hoffnagle, J. Vac. Sci. Technol. B 20, 924 (2002).
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  6. F. A. Houle, W. D. Hinsberg, M. Morrison, M. I. Sanchez, G. M. Wallraff, C. E. Larson, and J. A. Hoffnagle, J. Vac. Sci. Technol. B 18, 1874 (2000).
  7. J. A. Hoffnagle, W. D. Hinsberg, M. Sanchez, and F. A. Houle, J. Vac. Sci. Technol. B 17, 3306 (1999).

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