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Optics Letters

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  • Vol. 27, Iss. 20 — Oct. 15, 2002
  • pp: 1845–1847

Fluoride semiconductor saturable-absorber mirror for ultrashort pulse generation

S. Schön, M. Haiml, L. Gallmann, and U. Keller  »View Author Affiliations


Optics Letters, Vol. 27, Issue 20, pp. 1845-1847 (2002)
http://dx.doi.org/10.1364/OL.27.001845


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Abstract

We demonstrate what is to our knowledge the first ultrabroadband monolithically grown AlGaAs/CaF2 semiconductor saturable-absorber mirror (SESAM) that covers nearly the entire gain spectrum of a Ti:sapphire laser. A large high-reflectivity bandwidth of more than 300 nm is provided by a device consisting of only six material layers. This fluoride SESAM had a modulation depth of 2.2%, a fast recovery time constant of less than 150 fs, and a slow recovery time constant of 1.2 ps. Using this SESAM inside a Ti:sapphire laser produced self-starting sub-10-femtosecond pulses.

© 2002 Optical Society of America

OCIS Codes
(160.4330) Materials : Nonlinear optical materials
(310.3840) Thin films : Materials and process characterization
(320.7080) Ultrafast optics : Ultrafast devices
(320.7100) Ultrafast optics : Ultrafast measurements

Citation
S. Schön, M. Haiml, L. Gallmann, and U. Keller, "Fluoride semiconductor saturable-absorber mirror for ultrashort pulse generation," Opt. Lett. 27, 1845-1847 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-20-1845


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References

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