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Optics Letters

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  • Vol. 27, Iss. 21 — Nov. 1, 2002
  • pp: 1923–1925

Analytical description of spectral hole-burning effects in active semiconductors

Salvador Balle  »View Author Affiliations


Optics Letters, Vol. 27, Issue 21, pp. 1923-1925 (2002)
http://dx.doi.org/10.1364/OL.27.001923


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Abstract

An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.

© 2002 Optical Society of America

OCIS Codes
(140.3280) Lasers and laser optics : Laser amplifiers
(250.5980) Optoelectronics : Semiconductor optical amplifiers

Citation
Salvador Balle, "Analytical description of spectral hole-burning effects in active semiconductors," Opt. Lett. 27, 1923-1925 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-21-1923


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References

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