Analytical description of spectral hole-burning effects in active semiconductors
Optics Letters, Vol. 27, Issue 21, pp. 1923-1925 (2002)
http://dx.doi.org/10.1364/OL.27.001923
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Abstract
An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.
© 2002 Optical Society of America
OCIS Codes
(140.3280) Lasers and laser optics : Laser amplifiers
(250.5980) Optoelectronics : Semiconductor optical amplifiers
Citation
Salvador Balle, "Analytical description of spectral hole-burning effects in active semiconductors," Opt. Lett. 27, 1923-1925 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-21-1923
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