An analytical description of the effects of spectral hole burning on the optical properties of active semiconductor materials is developed for fields that are slow compared to intraband relaxation times. Nonlinear gain compression and four-wave mixing effects are discussed.
© 2002 Optical Society of America
Salvador Balle, "Analytical description of spectral hole-burning effects in active semiconductors," Opt. Lett. 27, 1923-1925 (2002)