A new, efficient, intracavity scheme for terahertz generation in femtosecond mode-locked Ti:sapphire lasers is proposed and demonstrated. The terahertz radiation is generated by a transient photocurrent in a GaAs layer grown on a fast semiconductor saturable absorber mirror. The average terahertz output radiation power is voltage controlled and can be electrically modulated at frequencies up to 100 kHz.
© 2002 Optical Society of America
Juraj Darmo, Thomas Müller, Gottfried Strasser, Karl Unterrainer, Tuan Le, Andreas Stingl, and Gabriel Tempea, "Voltage-controlled intracavity terahertz generator for self-starting Ti:sapphire lasers," Opt. Lett. 27, 1941-1943 (2002)