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Optics Letters

Optics Letters


  • Vol. 27, Iss. 23 — Dec. 2, 2002
  • pp: 2091–2093

Difference frequency generation of 8-µm radiation in orientation- patterned GaAs

O. Levi, T. J. Pinguet, T. Skauli, L. A. Eyres, K. R. Parameswaran, J. S. Harris, Jr., M. M. Fejer, T. J. Kulp, S. E. Bisson, B. Gerard, E. Lallier, and L. Becouarn  »View Author Affiliations

Optics Letters, Vol. 27, Issue 23, pp. 2091-2093 (2002)

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First-order quasi-phase-matched difference frequency generation of narrowband tunable mid-infrared light is demonstrated in orientation-patterned GaAs. The all-epitaxial orientation-patterned crystal is fabricated by a combination of molecular beam epitaxy and hydride vapor phase epitaxy. Lasers at 1.3 and 1.55 µm were mixed to give an idler output at 8 µm, with power and wavelength tuning consistent with theoretical estimates, indicating excellent material uniformity over the 19-mm-long and 500-µm-thick device.

© 2002 Optical Society of America

OCIS Codes
(190.2620) Nonlinear optics : Harmonic generation and mixing
(190.4360) Nonlinear optics : Nonlinear optics, devices
(190.4400) Nonlinear optics : Nonlinear optics, materials
(190.4720) Nonlinear optics : Optical nonlinearities of condensed matter
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW

O. Levi, T. J. Pinguet, T. Skauli, L. A. Eyres, K. R. Parameswaran, J. S. Harris, Jr., M. M. Fejer, T. J. Kulp, S. E. Bisson, B. Gerard, E. Lallier, and L. Becouarn, "Difference frequency generation of 8-µm radiation in orientation- patterned GaAs," Opt. Lett. 27, 2091-2093 (2002)

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