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Optics Letters

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  • Vol. 27, Iss. 5 — Mar. 1, 2002
  • pp: 297–299

Three-dimensional observation of internal defects in semiconductor crystals by use of two-photon excitation

Yoshimasa Kawata, Shigetoshi Kunieda, and Toru Kaneko  »View Author Affiliations


Optics Letters, Vol. 27, Issue 5, pp. 297-299 (2002)
http://dx.doi.org/10.1364/OL.27.000297


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Abstract

We present a method of three-dimensional observation of internal defects in semiconductor crystals for blue lasers by use of two-photon excitation. We excite photoluminescence by using a two-photon process. Since semiconductor materials have intrinsically high absorption in the short-wavelength region, the excitation light of photoluminescence is largely absorbed by the crystals. It is difficult to observe defects in deep regions. Two-photon excitation can overcome this limitation because near-infrared light can be used instead of blue light for excitation of photoluminescence, and the near-infrared light is absorbed at only the focused point. The excitation light can penetrate into the deep regions of the crystal. We succeeded in observing defects in a ZnSe crystal ~200 µm below the crystal surface. This is, as far as we know, the first demonstration of the observation of three-dimensional structures of defects in semiconductor crystals by the use of two-photon excitation.

© 2002 Optical Society of America

OCIS Codes
(180.0180) Microscopy : Microscopy
(180.1790) Microscopy : Confocal microscopy
(180.5810) Microscopy : Scanning microscopy
(180.6900) Microscopy : Three-dimensional microscopy

Citation
Yoshimasa Kawata, Shigetoshi Kunieda, and Toru Kaneko, "Three-dimensional observation of internal defects in semiconductor crystals by use of two-photon excitation," Opt. Lett. 27, 297-299 (2002)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-27-5-297


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