With the insertion of SiO2 nanoparticles in the oxide layer, near-lasing actions such as threshold behavior and resonance modes are observed at the Si bandgap energy of metal–oxide–silicon (MOS) structure. The threshold current is ~12 mA . The SiO2 nanoparticles cause simultaneous localization of electrons and holes to enhance phonon-assisted radiative recombination. Electroluminescence at Si bandgap energy is increased to orders of magnitude larger than in similar MOS structures without SiO2 nanoparticles. The efficient light emission at the Si bandgap energy indicates that a direct bandgap nature is not necessarily the basic requirement for radiative recombination.
© 2002 Optical Society of America
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.3380) Materials : Laser materials
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
Ching-Fuh Lin, Peng-Fei Chung, Miin-Jang Chen, and Wei-Fang Su, "Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action," Opt. Lett. 27, 713-715 (2002)