With the insertion of SiO<sub>2</sub> nanoparticles in the oxide layer, near-lasing actions such as threshold behavior and resonance modes are observed at the Si bandgap energy of metal–oxide–silicon (MOS) structure. The threshold current is ~12 mA . The SiO<sub>2</sub> nanoparticles cause simultaneous localization of electrons and holes to enhance phonon-assisted radiative recombination. Electroluminescence at Si bandgap energy is increased to orders of magnitude larger than in similar MOS structures without SiO<sub>2</sub> nanoparticles. The efficient light emission at the Si bandgap energy indicates that a direct bandgap nature is not necessarily the basic requirement for radiative recombination.
© 2002 Optical Society of America
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.3380) Materials : Laser materials
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
Ching-Fuh Lin, Peng-Fei Chung, Miin-Jang Chen, and Wei-Fang Su, "Nanoparticle-modified metal–oxide–silicon structure enhancing silicon band-edge electroluminescence to near-lasing action," Opt. Lett. 27, 713-715 (2002)