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Optics Letters

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  • Vol. 28, Iss. 1 — Jan. 1, 2003
  • pp: 43–45

Vertical-cavity saturable-absorber intensity modulator

M. Guina, A. Vainionpää, A. Harkonen, L. Orsila, J. Lyytikäinen, and O. G. Okhotnikov  »View Author Affiliations


Optics Letters, Vol. 28, Issue 1, pp. 43-45 (2003)
http://dx.doi.org/10.1364/OL.28.000043


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Abstract

We propose and demonstrate a reflection-type optical modulator, with surface-normal architecture, that exploits the optical saturation of absorption in semiconductor quantum wells. The modulation section of the modulator, which is composed of quantum wells placed within a Fabry–Perot cavity, is optically controlled by an intensity-modulated beam generated by an in-plane laser integrated monolithically on the same wafer and grown in a single epitaxial step. The modulation section and the in-plane laser share the same medium; therefore, efficient coupling between the control beam and the signal beam is achieved. The device was successfully used for active mode locking of an erbium-doped fiber laser.

© 2003 Optical Society of America

OCIS Codes
(230.4110) Optical devices : Modulators
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(320.7080) Ultrafast optics : Ultrafast devices
(320.7090) Ultrafast optics : Ultrafast lasers

Citation
M. Guina, A. Vainionpää, A. Harkonen, L. Orsila, J. Lyytikäinen, and O. G. Okhotnikov, "Vertical-cavity saturable-absorber intensity modulator," Opt. Lett. 28, 43-45 (2003)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-28-1-43


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