Abstract

We propose and demonstrate a reflection-type optical modulator, with surface-normal architecture, that exploits the optical saturation of absorption in semiconductor quantum wells. The modulation section of the modulator, which is composed of quantum wells placed within a Fabry–Perot cavity, is optically controlled by an intensity-modulated beam generated by an in-plane laser integrated monolithically on the same wafer and grown in a single epitaxial step. The modulation section and the in-plane laser share the same medium; therefore, efficient coupling between the control beam and the signal beam is achieved. The device was successfully used for active mode locking of an erbium-doped fiber laser.

© 2003 Optical Society of America

Harmonic mode locking by synchronous optical pumping of a saturable absorber with the residual pump

M. Guina and O. G. Okhotnikov
Opt. Lett. 28(5) 358-360 (2003)

1.5-µm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser

O. G. Okhotnikov, T. Jouhti, J. Konttinen, S. Karirinne, and M. Pessa
Opt. Lett. 28(5) 364-366 (2003)

Wavelength conversion of 1.53-µm-wavelength picosecond pulses in an ion-implanted multiple-quantum-well all-optical switch

E. P. Burr, M. Pantouvaki, A. J. Seeds, R. M. Gwilliam, S. M. Pinches, and C. C. Button
Opt. Lett. 28(6) 483-485 (2003)

Stable single- and dual-wavelength fiber laser mode locked and spectrum shaped by a Fabry–Perot saturable absorber

O. G. Okhotnikov and M. Guina
Opt. Lett. 25(22) 1624-1626 (2000)

Passively Q-switched 1.34-µm Nd:YVO₄ microchip laser with semiconductor saturable-absorber mirrors

R. Fluck, B. Braun, E. Gini, H. Melchior, and U. Keller
Opt. Lett. 22(13) 991-993 (1997)