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Optics Letters

Optics Letters


  • Vol. 28, Iss. 10 — May. 15, 2003
  • pp: 843–845

Fabrication and performance of a medium-dependent SiO2/Si photonic heterostructure device

D. T. Zhao, H. Zhou, Z. M. Jiang, Y. L. Fan, and Xun Wang  »View Author Affiliations

Optics Letters, Vol. 28, Issue 10, pp. 843-845 (2003)

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An optical device based on a photonic bandgap heterostructure is designed, fabricated, and characterized. The sample contains two sets of Si/SiO2 photonic crystals with different periods. When the device is working in air, it reflects omnidirectionally both TE and TM mode lights at the wavelength near 1.3 μm . The reflectivity measured in the bandgap is higher than 98% in an incident angle range 0°–70° . When the device is surrounded with silica (n>1.33) , it permits the total transmission for the TM mode but prevents the TE mode from propagating, thus behaving as a polarization splitter. The experimental extinction ratio of the reflected TE/TM is ~31 dB . The uniformity of the device performance over a large sample area is demonstrated.

© 2003 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.1360) Optical devices : Beam splitters
(310.1860) Thin films : Deposition and fabrication

D. T. Zhao, H. Zhou, Z. M. Jiang, Y. L. Fan, and Xun Wang, "Fabrication and performance of a medium-dependent SiO2/Si photonic heterostructure device," Opt. Lett. 28, 843-845 (2003)

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