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Optics Letters

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  • Vol. 28, Iss. 12 — Jun. 15, 2003
  • pp: 1010–1012

Ultralow-noise near-infrared detection system with a Si p–i–n photodiode

Makoto Akiba and Mikio Fujiwara  »View Author Affiliations


Optics Letters, Vol. 28, Issue 12, pp. 1010-1012 (2003)
http://dx.doi.org/10.1364/OL.28.001010


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Abstract

Noises associated with materials and devices in the readout circuits for a Si p–i–n photodiode have been measured. The dielectric polarization noise of the materials and devices near the gate circuit of the junction field-effect transistor used for the preamplifier determined the photodetection limits of photodiodes with a diameter smaller than several millimeters. We fabricated an ultralow-noise photodetection system, minimizing the polarization noise as much as possible. The readout noises of the system were 10 and 18 electrons in a correlated double sample for 0.1- and 1-mm-diameter Si p–i–n photodiodes at 77 K, respectively.

© 2003 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(040.3780) Detectors : Low light level
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(040.6040) Detectors : Silicon
(040.6070) Detectors : Solid state detectors

Citation
Makoto Akiba and Mikio Fujiwara, "Ultralow-noise near-infrared detection system with a Si p–i–n photodiode," Opt. Lett. 28, 1010-1012 (2003)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-28-12-1010


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