Abstract

Athermal silica-based interferometer-type planar light-wave circuits were realized by a newly developed multicore fabrication method. In this method, inductively coupled plasma-enhanced chemical-vapor deposition and polishing technologies are adopted on a silica substrate with a trench-type waveguide pattern prepared by reactive ion etching. Two kinds of deposited core material, $10{\mathrm{GeO}}_2–90{\mathrm{SiO}}_2$ (mol. %) and $8{\mathrm{GeO}}_2–5{\mathrm{B}}_2{\mathrm{O}}_3–87{\mathrm{SiO}}_2$ (mol. %), which show wavelength temperature dependence of 9.7 and $8.1 \mathrm{pm}{/}^{°}\mathrm{C}$, respectively, were used to prepare the waveguide sections in a device. By adjustment of the lengths of waveguide sections with these two different core materials, athermal characteristics of less than $0.5 \mathrm{pm}{/}^{°}\mathrm{C}$ were achieved for Mach–Zehnder interferometer filter devices at the $1.55‐\mathit{\mu }\mathrm{m}$ wavelength range while the temperature varied from $-20$ to 80 °C. The new method is also applicable for the preparation of many other kinds of functional devices.

© 2003 Optical Society of America

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