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Optics Letters

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  • Vol. 28, Iss. 13 — Jul. 1, 2003
  • pp: 1150–1152

Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors

S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N. Bouzaida, and L. Mollard  »View Author Affiliations


Optics Letters, Vol. 28, Issue 13, pp. 1150-1152 (2003)
http://dx.doi.org/10.1364/OL.28.001150


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Abstract

Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1μm . Corner mirrors that allow compact 90° turns between two perpendicular waveguides are characterized. Measured propagation losses are ~0.4 dB/cm and ~0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are ~1 dB . This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters.

© 2003 Optical Society of America

OCIS Codes
(230.4040) Optical devices : Mirrors
(230.7370) Optical devices : Waveguides

Citation
S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N. Bouzaida, and L. Mollard, "Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors," Opt. Lett. 28, 1150-1152 (2003)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-28-13-1150


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