Asymmetric multiple-quantum-well laser diodes with wide and flat gain
Optics Letters, Vol. 28, Issue 22, pp. 2189-2191 (2003)
http://dx.doi.org/10.1364/OL.28.002189
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Abstract
Asymmetric multiple-quantum-well laser diodes with wide and flat gain spectra were designed, fabricated, and analyzed. The active layer was composed of three 10-nm, one 8-nm, and two 6-nm 0.5% compressive strained wells and four 10-nm and one 5-nm 0.4% tensile strained barrier layer. Measured spectra of antireflection-coated ridge waveguide laser diodes with such quantum-well structures have shown that -1-dB spectral gain bandwidth can be as large as 90 nm.
© 2003 Optical Society of America
OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3600) Lasers and laser optics : Lasers, tunable
Citation
Oh-Kee Kwon, Kang-ho Kim, Eun-Deok Sim, Jong-Hoi Kim, Hyun-Soo Kim, and Kwang-Ryong Oh, "Asymmetric multiple-quantum-well laser diodes with wide and flat gain," Opt. Lett. 28, 2189-2191 (2003)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-28-22-2189
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