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Optics Letters

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  • Vol. 28, Iss. 5 — Mar. 1, 2003
  • pp: 364–366

1.5-μm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser

O. G. Okhotnikov, T. Jouhti, J. Konttinen, S. Karirinne, and M. Pessa  »View Author Affiliations


Optics Letters, Vol. 28, Issue 5, pp. 364-366 (2003)
http://dx.doi.org/10.1364/OL.28.000364


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Abstract

We present a new monolithic GaAs-based semiconductor saturable bsorber operating at 1.55 μm . An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3–1.55-μm wavelength range.

© 2003 Optical Society of America

OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(320.7080) Ultrafast optics : Ultrafast devices
(320.7090) Ultrafast optics : Ultrafast lasers

Citation
O. G. Okhotnikov, T. Jouhti, J. Konttinen, S. Karirinne, and M. Pessa, "1.5-μm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser," Opt. Lett. 28, 364-366 (2003)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-28-5-364


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