We present a new monolithic GaAs-based semiconductor saturable bsorber operating at 1.55 μm . An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3–1.55-μm wavelength range.
© 2003 Optical Society of America
O. G. Okhotnikov, T. Jouhti, J. Konttinen, S. Karirinne, and M. Pessa, "1.5-μm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser," Opt. Lett. 28, 364-366 (2003)