We have observed lasing in a complicated eigenmode of a quasi-stadium laser diode with an unstable resonator consisting of two curved end mirrors obeying an unstable resonator condition and two straight sidewall mirrors. The laser was fabricated by application of a reactive-ion-etching technique to a molecular beam epitaxy–grown graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs structure. The far-field pattern shows that the lasing mode corresponds to the complicated lowest-loss mode obtained numerically by an extended Fox–Li method.
© 2003 Optical Society of America
Takehiro Fukushima, Takahisa Harayama, Peter Davis, Pablo O. Vaccaro, Takehiro Nishimura, and Tahito Aida, "Quasi-stadium laser diodes with an unstable resonator condition," Opt. Lett. 28, 408-410 (2003)