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Optics Letters

Optics Letters

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  • Vol. 29, Iss. 19 — Oct. 1, 2004
  • pp: 2264–2266

Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver

Jonghyun Shin, Pallab Bhattacharya, Jian Xu, and György Váró  »View Author Affiliations


Optics Letters, Vol. 29, Issue 19, pp. 2264-2266 (2004)
http://dx.doi.org/10.1364/OL.29.002264


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Abstract

A monolithically integrated bacteriorhodopsin–semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37 Al0.63 As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.

© 2004 Optical Society of America

OCIS Codes
(040.5350) Detectors : Photovoltaic
(160.1890) Materials : Detector materials
(230.0230) Optical devices : Optical devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits

Citation
Jonghyun Shin, Pallab Bhattacharya, Jian Xu, and György Váró, "Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver," Opt. Lett. 29, 2264-2266 (2004)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-29-19-2264


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