We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-μm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.
© 2004 Optical Society of America
Jerry I. Dadap, Richard L. Espinola, Richard M. Osgood, Sharee J. McNab, and Yurii A. Vlasov, "Spontaneous Raman scattering in ultrasmall silicon waveguides," Opt. Lett. 29, 2755-2757 (2004)