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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 29, Iss. 6 — Mar. 15, 2004
  • pp: 572–574

Far-field emission of a semiconductor nanowire laser

A. V. Maslov and C. Z. Ning  »View Author Affiliations


Optics Letters, Vol. 29, Issue 6, pp. 572-574 (2004)
http://dx.doi.org/10.1364/OL.29.000572


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Abstract

The polarization properties and angular distribution of intensity of the far fields from a nanowire laser are investigated. The far-field emission depends strongly on the mode type (HE<sub>11</sub> , TE<sub>01</sub> , TM<sub>01</sub>) and the radius of the nanowire. The emission is weakly directional, and a large part of it can be emitted in the backward direction. Our results can be applied for experimental determination of a lasing mode by its far fields as well as for optimization of laser emission.

© 2004 Optical Society of America

OCIS Codes
(140.3300) Lasers and laser optics : Laser beam shaping
(140.3610) Lasers and laser optics : Lasers, ultraviolet

Citation
A. V. Maslov and C. Z. Ning, "Far-field emission of a semiconductor nanowire laser," Opt. Lett. 29, 572-574 (2004)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-29-6-572


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References

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