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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Vol. 30, Iss. 1 — Jan. 1, 2005
  • pp: 35–37

Demonstration of high Raman gain in a submicrometer-size silicon-on-insulator waveguide

Qianfan Xu, Vilson R. Almeida, and Michal Lipson  »View Author Affiliations


Optics Letters, Vol. 30, Issue 1, pp. 35-37 (2005)
http://dx.doi.org/10.1364/OL.30.000035


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Abstract

We show high Raman gain in a silicon submicrometer-size planar waveguide. Using high-confinement structures and picosecond pump pulses, we show 3.1-dB net internal gain with 2.8-W peak pump power in a 7-mm-long waveguide. We also analyze experimentally and theoretically the effect of free-carrier absorption on the Raman gain.

© 2005 Optical Society of America

OCIS Codes
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(230.7370) Optical devices : Waveguides
(250.4480) Optoelectronics : Optical amplifiers

Citation
Qianfan Xu, Vilson R. Almeida, and Michal Lipson, "Demonstration of high Raman gain in a submicrometer-size silicon-on-insulator waveguide," Opt. Lett. 30, 35-37 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-1-35

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