Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes
Optics Letters, Vol. 30, Issue 14, pp. 1773-1775 (2005)
http://dx.doi.org/10.1364/OL.30.001773
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Abstract
We investigated the current-voltage characteristics and responsivity of photodiodes fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a sulfur-containing atmosphere. The photodiodes that we fabricated have a broad spectral response ranging from the visible to the near infrared (400-1600 nm). The responsivity depends on substrate doping, microstructuring fluence, and annealing temperature. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, 2 orders of magnitude higher than for standard silicon photodiodes. For wavelengths below the bandgap we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm.
© 2005 Optical Society of America
OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(140.3390) Lasers and laser optics : Laser materials processing
(160.1890) Materials : Detector materials
Citation
James E. Carey, Catherine H. Crouch, Mengyan Shen, and Eric Mazur, "Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes," Opt. Lett. 30, 1773-1775 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-14-1773
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