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Optics Letters

Optics Letters


  • Vol. 30, Iss. 15 — Aug. 1, 2005
  • pp: 1992–1994

Active optical control of the terahertz reflectivity of high-resistivity semiconductors

L. Fekete, J. Y. Hlinka, F. Kadlec, P. Kuzel, and P. Mounaix  »View Author Affiliations

Optics Letters, Vol. 30, Issue 15, pp. 1992-1994 (2005)

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We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R<3%) and highly reflective (R>85%) limits by means of the intensity and wavelength of the optical illumination.

© 2005 Optical Society of America

OCIS Codes
(160.5140) Materials : Photoconductive materials
(230.1150) Optical devices : All-optical devices
(230.4110) Optical devices : Modulators
(300.6270) Spectroscopy : Spectroscopy, far infrared
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(310.6860) Thin films : Thin films, optical properties

L. Fekete, J. Y. Hlinka, F. Kadlec, P. Kuzel, and P. Mounaix, "Active optical control of the terahertz reflectivity of high-resistivity semiconductors," Opt. Lett. 30, 1992-1994 (2005)

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